View MTN7000ZA3_4854828.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 1/6
MTN7000ZA3
Description
The MTN7000ZA3 is a N-channel enhancement-mode MOSFET.
Features
* Low on-resistance * High ESD * High speed switching * Low-voltage drive(4V) * Easily designed drive circuits * Easy to use in parallel * Pb-free package
Symbol
MTN7000ZA3 D
Outline
TO-92
G
S
GGate SSource DDrain
SGD
MTN7000ZA3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current
Continuous Pulsed Continuous Pulsed
Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 2/6
Symbol VDSS VGSS ID IDP IDR IDRP PD Rth,JA TCH Tstg
ESD susceptibility Total Power Dissipation Thermal Resistance, Junction to Ambient Channel Temperature Storage Temperature
Note : *1. Pulse Width 300s, Duty cycle 2% *2. Human body model, 1.5k in series with 100pF
Limits 60 20 300 700 300 700 2000 400 312.5 +150 -55~+150
*1 *1 *2
Unit V V mA mA mA mA V mW C/W C C
Electrical Characteristics (Ta=25C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS 10 IDSS 1 1.8 2.3 RDS(ON)* 1.25 1.7 GFS 200 VSD 1.4 Ciss 60 Coss 25 Crss 22 -
Unit V V A A mS V pF
Test Conditions VGS=0, ID=10A VDS=VGS, ID=1mA VGS=20V, VDS=0 VDS=60V, VGS=0 ID=300mA, VGS=4V ID=300mA, VGS=10V VDS=10V, ID=300mA ISD=115mA, VGS=0 VDS=25V, VGS=0, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Ordering Information
Device MTN7000ZA3 Package TO-92 (Pb-free) Shipping 2000 pcs / Tape & Reel Marking N7000
MTN7000ZA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
1.2 1 Drain Current - ID(A) 0.8 0.6 0.4
3V 6V 4V
Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 3/6
Typical Transfer Characteristics
0.7 0.6 Drain Current -ID(A) 0.5 0.4 0.3 0.2 0.1
VGS=2.2V VDS=10V
3.5V
0.2 0 0 1 2 3 Drain-Source Voltage -VDS(V) 4
0 0 1 2 3 Gate-Source Voltage-VGS(V) 4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10 Static Drain-Source On-State Resistance-RDS(on)()
Static Drain-Source On-State Resistance-RDS(on)()
VGS=4V
10
1
1
VGS=4V
VGS=10V
0.1 0.01 0.1 Drain Current-ID(A) 1
0.1 0.01 0.1 Drain Current-ID(A) Reverse Drain Current vs Source-Drain Voltage 10 1
Static Drain-Source On-State Resistance vs Gate-Source Voltage
7
Static Drain-Source On-State Resistance-RDS(ON)()
6 5 4 3 2 1 0 0 5 10 15 20 Gate-Source Voltage-VGS(V) 25
150mA ID=300mA
Reverse Drain Current -IDR(A)
1
0.1
0.01
VGS=0V
0.001 0 0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V) 1
MTN7000ZA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Reverse Drain Current vs Source-Drain Voltage
10
Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 4/6
Power Derating Curve 500
Reverse Drain Current -IDR(A)
1
VGS=0V
Power Dissipation---PD(mW)
400 300 200 100 0
0.1
VGS=10V
0.01
0.001
0
0.2 0.4 0.6 0.8 Source-Drain Voltage-VSD(V)
1
0
50 100 150 Ambient Temperature---TA()
200
MTN7000ZA3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Taping Outline
Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 5/6
DIM A D D1 D2 E F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 -
Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch
Millimeters Min. 4.33 3.80 0.36 4.33 1.5 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.0 2.90 0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255
MTN7000ZA3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
Marking:
Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : Page No. : 6/6
A B
1 2 3
2
N7000
3
C
D
H I E F
G
1
Style: Pin 1.Source 2.Gate 3.Drain 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7000ZA3
CYStek Product Specification

▲Up To Search▲

Price & Availability of MTN7000ZA3

	To Download MTN7000ZA3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .